Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPI16N50C3HKSA1
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3,302
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Infineon Technologies MOSFET N-CH 560V 16A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 160W (Tc) N-Channel - 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 10V ±20V
SPI12N50C3XKSA1
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1,112
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Infineon Technologies MOSFET N-CH 560V 11.6A TO-262 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 125W (Tc) N-Channel - 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 10V ±20V
SPI21N50C3XKSA1
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3,201
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Infineon Technologies MOSFET N-CH 560V 21A I2PAK CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 208W (Tc) N-Channel - 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 10V ±20V
SPI08N50C3XKSA1
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2,460
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Infineon Technologies MOSFET N-CH 560V 7.6A TO-262 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 83W (Tc) N-Channel - 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 10V ±20V