Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD80R3K3P7ATMA1
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Infineon Technologies MOSFET N-CH 800V 1.9A TO252-3 CoolMOS™ P7 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 18W (Tc) N-Channel - 800V 1.9A (Tc) 3.3 Ohm @ 590mA, 10V 3.5V @ 30µA 5.8nC @ 10V 120pF @ 500V 10V ±20V
IPD80R3K3P7ATMA1
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Infineon Technologies MOSFET N-CH 800V 1.9A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 18W (Tc) N-Channel - 800V 1.9A (Tc) 3.3 Ohm @ 590mA, 10V 3.5V @ 30µA 5.8nC @ 10V 120pF @ 500V 10V ±20V
IPD80R3K3P7ATMA1
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Infineon Technologies MOSFET N-CH 800V 1.9A TO252-3 CoolMOS™ P7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 18W (Tc) N-Channel - 800V 1.9A (Tc) 3.3 Ohm @ 590mA, 10V 3.5V @ 30µA 5.8nC @ 10V 120pF @ 500V 10V ±20V