Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NDD03N80ZT4G
RFQ
VIEW
RFQ
1,292
In-stock
ON Semiconductor MOSFET N-CH 800V 2.9A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 96W (Tc) N-Channel 800V 2.9A (Tc) 4.5 Ohm @ 1.2A, 10V 4.5V @ 50µA 17nC @ 10V 440pF @ 25V 10V ±30V
GP1M003A080CH
RFQ
VIEW
RFQ
1,481
In-stock
Global Power Technologies Group MOSFET N-CH 800V 3A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 94W (Tc) N-Channel 800V 3A (Tc) 4.2 Ohm @ 1.5A, 10V 4V @ 250µA 19nC @ 10V 696pF @ 25V 10V ±30V