- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,192
In-stock
|
IXYS | MOSFET N-CH 800V 13A ISOPLUS220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | - | N-Channel | Super Junction | 800V | 13A (Tc) | 290 mOhm @ 9A, 10V | 4V @ 1mA | 90nC @ 10V | 2300pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,146
In-stock
|
Microsemi Corporation | MOSFET N-CH 800V 31A SOT-227 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 833W (Tc) | N-Channel | - | 800V | 31A (Tc) | 145 mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | 4510pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,936
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 8A TO-220AB | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 104W (Tc) | N-Channel | - | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
1,758
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 6A TO-220AB | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 83W (Tc) | N-Channel | - | 800V | 6A (Tc) | 900 mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | 785pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
1,012
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 4A TO-220AB | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 63W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
1,069
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 8A TO262-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,750
In-stock
|
Microsemi Corporation | MOSFET N-CH 800V 17A D3PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 208W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2250pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,101
In-stock
|
Microsemi Corporation | MOSFET N-CH 800V 17A TO-247 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 208W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2250pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,236
In-stock
|
Microsemi Corporation | MOSFET N-CH 800V 11A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 [K] | 156W (Tc) | N-Channel | - | 800V | 11A (Tc) | 450 mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60nC @ 10V | 1585pF @ 25V | 10V | ±20V | |||
