- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,792
In-stock
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Infineon Technologies | MOSFET N-CH 650V 16.1A TO-252 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 208.3W (Tc) | N-Channel | - | 650V | 16.1A (Tc) | 250 mOhm @ 4.4A, 10V | 3.5V @ 400µA | 44nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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904
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13.8A TO263 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104W (Tc) | N-Channel | - | 650V | 13.8A (Tc) | 280 mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | 10V | ±20V |