Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SQ2319ADS-T1_GE3
RFQ
VIEW
RFQ
2,915
In-stock
Vishay Siliconix MOSFET P-CH 40V 4.6A SOT23-3 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 2.5W (Tc) P-Channel - 40V 4.6A (Tc) 75 mOhm @ 3A, 10V 2.5V @ 250µA 16nC @ 10V 620pF @ 20V 4.5V, 10V ±20V
SI2319DS-T1-E3
RFQ
VIEW
RFQ
1,526
In-stock
Vishay Siliconix MOSFET P-CH 40V 2.3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 40V 2.3A (Ta) 82 mOhm @ 3A, 10V 3V @ 250µA 17nC @ 10V 470pF @ 20V 4.5V, 10V ±20V
SI2319CDS-T1-GE3
RFQ
VIEW
RFQ
1,475
In-stock
Vishay Siliconix MOSFET P-CH 40V 4.4A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 40V 4.4A (Tc) 77 mOhm @ 3.1A, 10V 2.5V @ 250µA 21nC @ 10V 595pF @ 20V 4.5V, 10V ±20V
SI2318CDS-T1-GE3
RFQ
VIEW
RFQ
1,376
In-stock
Vishay Siliconix MOSFET N-CH 40V 5.6A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.1W (Tc) N-Channel - 40V 5.6A (Tc) 42 mOhm @ 4.3A, 10V 2.5V @ 250µA 9nC @ 10V 340pF @ 20V 4.5V, 10V ±20V
SI2318DS-T1-GE3
RFQ
VIEW
RFQ
2,161
In-stock
Vishay Siliconix MOSFET N-CH 40V 3A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 40V 3A (Ta) 45 mOhm @ 3.9A, 10V 3V @ 250µA 15nC @ 10V 540pF @ 20V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,353
In-stock
Vishay Siliconix MOSFET P-CHAN 40V TrenchFET® Gen III Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 40V 2.7A (Ta), 3.6A (Tc) 75 mOhm @ 2.7A, 10V 2.5V @ 250µA 19nC @ 10V 650pF @ 20V 4.5V, 10V ±20V
SI2318DS-T1-E3
RFQ
VIEW
RFQ
3,903
In-stock
Vishay Siliconix MOSFET N-CH 40V 3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 40V 3A (Ta) 45 mOhm @ 3.9A, 10V 3V @ 250µA 15nC @ 10V 540pF @ 20V 4.5V, 10V ±20V