- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,607
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 2.8A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 700mW (Ta) | P-Channel | 20V | 2.8A (Tc) | 130 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 4.5nC @ 4.5V | 480pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,908
In-stock
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Diodes Incorporated | MOSFET P-CHAN 24V SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 800mW (Ta) | P-Channel | 20V | 4.3A (Ta) | 45 mOhm @ 4A, 4.5V | 1V @ 250µA | 6.8nC @ 4.5V | 634pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,732
In-stock
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Diodes Incorporated | MOSFET P-CHAN 24V SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 800mW (Ta) | P-Channel | 20V | 3.8A (Ta) | 62 mOhm @ 4.2A, 4.5V | 1V @ 250µA | 6.3nC @ 4.5V | 487pF @ 20V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,294
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 5.3A SOT-23 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 960mW (Ta), 1.7W (Tc) | P-Channel | 20V | 5.3A (Tc) | 39 mOhm @ 4.1A, 4.5V | 1V @ 250µA | 36nC @ 8V | 1160pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,079
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 4.7A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | 20V | 4.7A (Ta) | 39 mOhm @ 4.7A, 4.5V | 1V @ 250µA | 12.5nC @ 4.5V | 1020pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,674
In-stock
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Diodes Incorporated | MOSFET P-CHA 20V 2.4A SOT23 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 840mW (Ta) | P-Channel | 20V | 2.4A (Ta) | 160 mOhm @ 1A, 4.5V | 1V @ 250µA | 3.4nC @ 10V | 156pF @ 6V | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
1,868
In-stock
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Micro Commercial Co | MOSFET P-CH 20V 4A SOT-23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Ta) | P-Channel | 20V | 4A (Ta) | 50 mOhm @ 4A, 4.5V | 1V @ 250µA | 17.2nC @ 4.5V | 1450pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
1,471
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 3.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | 20V | 3.2A (Ta) | 55 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 10nC @ 10V | 990pF @ 10V | 1.8V, 4.5V | ±8V | |||
