Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDN327N
RFQ
VIEW
RFQ
2,305
In-stock
ON Semiconductor MOSFET N-CH 20V 2A SSOT-3 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SuperSOT-3 500mW (Ta) N-Channel 20V 2A (Ta) 70 mOhm @ 2A, 4.5V 1.5V @ 250µA 6.3nC @ 4.5V 423pF @ 10V 1.8V, 4.5V ±8V
DMN2230U-7
RFQ
VIEW
RFQ
2,841
In-stock
Diodes Incorporated MOSFET N-CH 20V 2A SOT23-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 600mW (Ta) N-Channel 20V 2A (Ta) 110 mOhm @ 2.5A, 4.5V 1V @ 250µA - 188pF @ 10V 1.8V, 4.5V ±12V
DMN2230UQ-7
RFQ
VIEW
RFQ
1,183
In-stock
Diodes Incorporated MOSFET N-CH 20V 2A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 600mW (Ta) N-Channel 20V 2A (Ta) 110 mOhm @ 2.5A, 4.5V 1V @ 250µA 2.3nC @ 10V 188pF @ 10V 1.8V, 4.5V ±12V