Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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CSD25201W15
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3,673
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Texas Instruments MOSFET P-CH 20V 4A 9DSBGA NexFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.5W (Ta) P-Channel 20V 4A (Ta) 40 mOhm @ 2A, 4.5V 1.1V @ 250µA 5.6nC @ 4.5V 510pF @ 10V 1.8V, 4.5V -6V
CSD25202W15T
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RFQ
1,118
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Texas Instruments MOSFET P-CH 20V 4A 9DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 500mW (Ta) P-Channel 20V 4A (Ta) 26 mOhm @ 2A, 4.5V 1.05V @ 250µA 7.5nC @ 4.5V 1010pF @ 10V 1.8V, 4.5V -6V
CSD25202W15
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RFQ
757
In-stock
Texas Instruments MOSFET P-CH 20V 4A 9DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 500mW (Ta) P-Channel 20V 4A (Ta) 26 mOhm @ 2A, 4.5V 1.05V @ 250µA 7.5nC @ 4.5V 1010pF @ 10V 1.8V, 4.5V -6V
PMCM4401UPEZ
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RFQ
1,611
In-stock
Nexperia USA Inc. MOSFET P-CHANNEL 20V 4A 4WLCSP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA, WLCSP 4-WLCSP (0.78x0.78) 400mW (Ta), 12.5W (Tc) P-Channel 20V 4A (Ta) 95 mOhm @ 3A, 4.5V 900mV @ 250µA 10nC @ 4.5V 420pF @ 10V 1.8V, 4.5V ±8V
PMV32UP,215
RFQ
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RFQ
1,160
In-stock
Nexperia USA Inc. MOSFET P-CH 20V 4A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 510mW (Ta) P-Channel 20V 4A (Ta) 36 mOhm @ 2.4A, 4.5V 950mV @ 250µA 15.5nC @ 4.5V 1890pF @ 10V 1.8V, 4.5V ±8V
SI3415-TP
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RFQ
1,868
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Micro Commercial Co MOSFET P-CH 20V 4A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Ta) P-Channel 20V 4A (Ta) 50 mOhm @ 4A, 4.5V 1V @ 250µA 17.2nC @ 4.5V 1450pF @ 10V 1.8V, 4.5V ±8V
DMG3415U-7
RFQ
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RFQ
3,722
In-stock
Diodes Incorporated MOSFET P-CH 20V 4A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 900mW (Ta) P-Channel 20V 4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 9.1nC @ 4.5V 294pF @ 10V 1.8V, 4.5V ±8V