- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,726
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CH 20V 4.5A 6-TDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 6.5W (Tc) | P-Channel | - | 20V | 4.5A (Ta) | 94 mOhm @ 2.8A, 4.5V | 500mV @ 250µA | 4.5nC @ 4.5V | 5.2pF @ 6V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,687
In-stock
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ON Semiconductor | MOSFET P-CH 20V 7.3A MLP2X2 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | - | 20V | 7.3A (Ta) | 30 mOhm @ 7.3A, 4.5V | 1.5V @ 250µA | 20nC @ 4.5V | 1645pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,177
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.1A 2X2MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Tj) | P-Channel | Schottky Diode (Isolated) | 20V | 3.1A (Ta) | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 720pF @ 10V | 2.5V, 4.5V | ±12V |