- Series :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,384
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-SOIC | LITTLE FOOT® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta), 3.1W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 6.2A (Tc) | 54 mOhm @ 5A, 10V | 3V @ 250µA | 13nC @ 10V | 450pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,935
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 3.3A 8-SOIC | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 900mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.3A (Ta) | 125 mOhm @ 3.3A, 10V | 3V @ 250µA | 3nC @ 5V | 182pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,576
In-stock
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ON Semiconductor | MOSFET P-CH 20V 4.3A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 4.3A (Ta) | 100 mOhm @ 2A, 10V | 3V @ 250µA | 40nC @ 10V | 1425pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,670
In-stock
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Infineon Technologies | MOSFET P-CH 20V 2.5A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.6W (Ta), 2.5W (Tc) | P-Channel | - | 20V | 2.5A (Tc) | 250 mOhm @ 1A, 10V | 3V @ 250µA | 15nC @ 10V | 270pF @ 20V | 4.5V, 10V | ±20V | |||
