- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,994
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
1,348
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,490
In-stock
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Diodes Incorporated | MOSFET P-CH 25V 6.7A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 800mW (Ta) | P-Channel | - | 25V | 6.7A (Ta) | 27 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 48.7nC @ 8V | 2530pF @ 15V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,813
In-stock
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Diodes Incorporated | MOSFET P-CH 25V 6.7A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 800mW (Ta) | P-Channel | - | 25V | 6.7A (Ta) | 27 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 48.7nC @ 8V | 2530pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,169
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 7.6A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 730mW (Ta) | P-Channel | - | 20V | 7.6A (Ta) | 27 mOhm @ 7A, 4.5V | 1V @ 250µA | 27nC @ 4.5V | 1837pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,952
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | |||
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VIEW |
2,177
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 8.1A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2.03W (Ta) | P-Channel | - | 20V | 8.1A (Ta) | 29 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 20.5nC @ 4.5V | 1808pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,191
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 4.5V | ±12V | |||
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VIEW |
3,555
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 9A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 730mW (Ta) | P-Channel | - | 20V | 9A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
739
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 26A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2.1W (Ta) | P-Channel | - | 12V | 26A (Tc) | 8.5 mOhm @ 5A, 4.5V | 1V @ 250µA | 47nC @ 8V | 2475pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,668
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 15A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2W (Ta) | P-Channel | - | 12V | 15A (Ta) | 11 mOhm @ 5A, 4.5V | 1V @ 250µA | 44nC @ 8V | 1860pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,652
In-stock
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ON Semiconductor | MOSFET P-CH 20V 8.2A UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 700mW (Ta) | P-Channel | - | 20V | 5.1A (Ta) | 18 mOhm @ 7A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | 1.5V, 4.5V | ±8V | |||
