- Manufacture :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.1 Ohm @ 380mA, 10V (2)
- 1.5 Ohm @ 360mA, 10V (2)
- 1.8 Ohm @ 210mA, 10V (2)
- 160 mOhm @ 1.9A, 10V (6)
- 2 Ohm @ 270mA, 10V (2)
- 200 mOhm @ 1.6A, 10V (6)
- 220 mOhm @ 1.6A, 10V (3)
- 3 Ohm @ 220mA, 10V (2)
- 3.6 Ohm @ 210mA, 10V (2)
- 4.4 Ohm @ 190mA, 10V (2)
- 45 mOhm @ 3.7A, 10V (7)
- 57.5 mOhm @ 3.1A, 10V (5)
- 75 mOhm @ 2.8A, 10V (8)
- 800 mOhm @ 480mA, 10V (2)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
51 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,157
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,203
In-stock
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Infineon Technologies | MOSFET N-CH 55V 1.5A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.5A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
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VIEW |
779
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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VIEW |
2,396
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
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VIEW |
2,776
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,493
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,312
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,285
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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|
VIEW |
695
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,709
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,622
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,958
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,080
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,421
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,190
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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|
VIEW |
861
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,287
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
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|
VIEW |
931
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,204
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,429
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,177
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,686
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,078
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,695
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,075
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 1.5A SOT-223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.5A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,003
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,991
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 370MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 500V | 370mA (Ta) | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,757
In-stock
|
Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 400V | 490mA (Ta) | 1.8 Ohm @ 210mA, 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,305
In-stock
|
Vishay Siliconix | MOSFET N-CH 400V 350MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 400V | 350mA (Ta) | 3.6 Ohm @ 210mA, 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,544
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
