Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFQ60N60X
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2,290
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IXYS MOSFET N-CH 600V 60A TO3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 890W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 4.5V @ 8mA 143nC @ 10V 5800pF @ 25V 10V ±30V
IXTQ60N20L2
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RFQ
2,973
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IXYS MOSFET N-CH 200V 60A TO-3P Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 540W (Tc) N-Channel - 200V 60A (Tc) 45 mOhm @ 30A, 10V 4.5V @ 250µA 255nC @ 10V 10500pF @ 25V 10V ±20V
IXFQ60N25X3
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RFQ
1,555
In-stock
IXYS MOSFET N-CHANNEL 250V 60A TO3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 320W (Tc) N-Channel - 250V 60A (Tc) 23 mOhm @ 30A, 10V 4.5V @ 1.5mA 50nC @ 10V 3610pF @ 25V 10V ±20V
IXFQ60N50P3
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RFQ
2,294
In-stock
IXYS MOSFET N-CH 500V 60A TO3P HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 1040W (Tc) N-Channel - 500V 60A (Tc) 100 mOhm @ 30A, 10V 5V @ 4mA 96nC @ 10V 6250pF @ 25V 10V ±30V