Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFM210BTF_FP001
RFQ
VIEW
RFQ
3,462
In-stock
ON Semiconductor MOSFET N-CH 200V 0.77A SOT-223 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Ta) N-Channel 200V 770mA (Tc) 1.5 Ohm @ 390mA, 10V 4V @ 250µA 9.3nC @ 10V 225pF @ 25V 10V ±30V
BSP373NH6327XTSA1
RFQ
VIEW
RFQ
1,792
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
BSP373NH6327XTSA1
RFQ
VIEW
RFQ
3,335
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
BSP373NH6327XTSA1
RFQ
VIEW
RFQ
2,364
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
TSM950N10CW RPG
RFQ
VIEW
RFQ
1,503
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 100V 6.5A SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 9W (Tc) N-Channel 100V 6.5A (Tc) 95 mOhm @ 5A, 10V 2.5V @ 250µA 9.3nC @ 10V 1480pF @ 50V 4.5V, 10V ±20V
TSM950N10CW RPG
RFQ
VIEW
RFQ
2,030
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 100V 6.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 9W (Tc) N-Channel 100V 6.5A (Tc) 95 mOhm @ 5A, 10V 2.5V @ 250µA 9.3nC @ 10V 1480pF @ 50V 4.5V, 10V ±20V
TSM950N10CW RPG
RFQ
VIEW
RFQ
2,007
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 100V 6.5A SOT223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 9W (Tc) N-Channel 100V 6.5A (Tc) 95 mOhm @ 5A, 10V 2.5V @ 250µA 9.3nC @ 10V 1480pF @ 50V 4.5V, 10V ±20V
TSM900N06CW RPG
RFQ
VIEW
RFQ
2,112
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 11A SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 25W (Tc) N-Channel 60V 11A (Tc) 90 mOhm @ 6A, 10V 2.5V @ 250µA 9.3nC @ 10V 500pF @ 15V 4.5V, 10V ±20V
TSM900N06CW RPG
RFQ
VIEW
RFQ
706
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 11A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 25W (Tc) N-Channel 60V 11A (Tc) 90 mOhm @ 6A, 10V 2.5V @ 250µA 9.3nC @ 10V 500pF @ 15V 4.5V, 10V ±20V
TSM900N06CW RPG
RFQ
VIEW
RFQ
1,406
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 11A SOT223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 25W (Tc) N-Channel 60V 11A (Tc) 90 mOhm @ 6A, 10V 2.5V @ 250µA 9.3nC @ 10V 500pF @ 15V 4.5V, 10V ±20V