Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PMT29EN,135
RFQ
VIEW
RFQ
1,805
In-stock
NXP USA Inc. MOSFET N-CH 30V 6A SC-73 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 820mW (Ta), 8.33W (Tc) N-Channel - 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 4.5V, 10V ±20V
PMT29EN,115
RFQ
VIEW
RFQ
3,494
In-stock
NXP USA Inc. MOSFET N-CH 30V 6A SC-73 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 820mW (Ta), 8.33W (Tc) N-Channel - 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 4.5V, 10V ±20V
PMT29EN,115
RFQ
VIEW
RFQ
2,919
In-stock
NXP USA Inc. MOSFET N-CH 30V 6A SC-73 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 820mW (Ta), 8.33W (Tc) N-Channel - 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 4.5V, 10V ±20V
PMT29EN,115
RFQ
VIEW
RFQ
1,351
In-stock
NXP USA Inc. MOSFET N-CH 30V 6A SC-73 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 820mW (Ta), 8.33W (Tc) N-Channel - 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 4.5V, 10V ±20V
FDT434P
RFQ
VIEW
RFQ
3,419
In-stock
ON Semiconductor MOSFET P-CH 20V 6A SOT-223 PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 20V 6A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 19nC @ 4.5V 1187pF @ 10V 2.5V, 4.5V ±8V
FDT434P
RFQ
VIEW
RFQ
2,089
In-stock
ON Semiconductor MOSFET P-CH 20V 6A SOT-223 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 20V 6A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 19nC @ 4.5V 1187pF @ 10V 2.5V, 4.5V ±8V
FDT434P
RFQ
VIEW
RFQ
1,542
In-stock
ON Semiconductor MOSFET P-CH 20V 6A SOT-223 PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 20V 6A (Ta) 50 mOhm @ 6A, 4.5V 1V @ 250µA 19nC @ 4.5V 1187pF @ 10V 2.5V, 4.5V ±8V