- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
733
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
2,775
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.43A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
1,861
In-stock
|
Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
2,469
In-stock
|
Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,651
In-stock
|
ON Semiconductor | MOSFET N-CH 250V 0.83A SOT-223 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.5W (Tc) | N-Channel | - | 250V | 830mA (Tc) | 1.75 Ohm @ 415mA, 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | 10V | ±30V | ||||
VIEW |
1,764
In-stock
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ON Semiconductor | MOSFET P-CH 250V 0.55A SOT-223 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.5W (Tc) | P-Channel | - | 250V | 550mA (Tc) | 4 Ohm @ 275mA, 10V | 5V @ 250µA | 8.5nC @ 10V | 250pF @ 25V | 10V | ±30V | ||||
VIEW |
2,523
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 790MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | - | 250V | 790mA (Tc) | 2 Ohm @ 470mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | ||||
VIEW |
1,187
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 250V 375MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.5W (Ta) | N-Channel | - | 250V | 375mA (Ta) | 5 Ohm @ 300mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 10V | ±20V | ||||
VIEW |
1,296
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 250V 375MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.5W (Ta) | N-Channel | - | 250V | 375mA (Ta) | 5 Ohm @ 300mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 10V | ±20V | ||||
VIEW |
2,969
In-stock
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Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | ||||
VIEW |
1,674
In-stock
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Diodes Incorporated | MOSFET P-CH 250V 0.265A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | - | 250V | 265mA (Ta) | 14 Ohm @ 200mA, 10V | 2V @ 1mA | 3.45nC @ 10V | 73pF @ 25V | 3.5V, 10V | ±40V | ||||
VIEW |
1,539
In-stock
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Diodes Incorporated | MOSFET N-CH 250V 310MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 250V | 310mA (Ta) | 8.5 Ohm @ 500mA, 10V | 1.8V @ 1mA | 3.65nC @ 10V | 72pF @ 25V | 2.5V, 10V | ±40V | ||||
VIEW |
1,227
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V |