- Packaging :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,140
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | SIPMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 600V | 120mA (Ta) | 45 Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | 146pF @ 25V | 0V, 10V | ±20V | |||
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3,670
In-stock
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Infineon Technologies | MOSFET P-CH 100V 980MA SOT223 | SIPMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 980mA (Tc) | 900 mOhm @ 980mA, 10V | 4V @ 380µA | 12nC @ 10V | 319pF @ 25V | 10V | ±20V | |||
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VIEW |
1,762
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | SIPMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 120mA (Ta) | - | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,318
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | SIPMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 120mA (Ta) | - | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,609
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | SIPMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 120mA (Ta) | - | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,840
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
3,074
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
2,380
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
1,015
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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VIEW |
699
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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VIEW |
3,767
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
