Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF8707GPBF
RFQ
VIEW
RFQ
1,608
In-stock
Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 11A (Ta) 11.9 mOhm @ 11A, 10V 2.35V @ 25µA 9.3nC @ 4.5V 760pF @ 15V 4.5V, 10V ±20V
IRF8707PBF
RFQ
VIEW
RFQ
2,828
In-stock
Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 11A (Ta) 11.9 mOhm @ 11A, 10V 2.35V @ 25µA 9.3nC @ 4.5V 760pF @ 15V 4.5V, 10V ±20V