Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRF7207Q
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2,576
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Infineon Technologies MOSFET P-CH 20V 5.4A 8SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 20V 5.4A (Ta) 60 mOhm @ 5.4A, 4.5V 1.6V @ 250µA 22nC @ 4.5V 780pF @ 15V 2.7V, 4.5V ±12V
IRF7422D2PBF
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RFQ
2,430
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Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 90 mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V 2.7V, 4.5V ±12V
IRF7402PBF
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RFQ
3,381
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Infineon Technologies MOSFET N-CH 20V 6.8A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 6.8A (Ta) 35 mOhm @ 4.1A, 4.5V 700mV @ 250µA 22nC @ 4.5V 650pF @ 15V 2.7V, 4.5V ±12V
IRF7207PBF
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RFQ
1,880
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Infineon Technologies MOSFET P-CH 20V 5.4A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 20V 5.4A (Tc) 60 mOhm @ 5.4A, 4.5V 700mV @ 250µA 22nC @ 4.5V 780pF @ 15V 2.7V, 4.5V ±12V
IRF7207
RFQ
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RFQ
3,165
In-stock
Infineon Technologies MOSFET P-CH 20V 5.4A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 20V 5.4A (Tc) 60 mOhm @ 5.4A, 4.5V 700mV @ 250µA 22nC @ 4.5V 780pF @ 15V 2.7V, 4.5V ±12V