- Part Status :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,730
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 10A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 10A (Ta) | 13 mOhm @ 10A, 10V | 3V @ 250µA | 32nC @ 4.5V | 2820pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,335
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10A (Ta) | 13.5 mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
682
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 10A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 10A (Ta) | 13 mOhm @ 10A, 10V | 2V @ 250µA | 44nC @ 4.5V | 3430pF @ 20V | 2.8V, 10V | ±12V | |||
|
|
VIEW |
949
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 10A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 10A (Ta) | 20 mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | 1700pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,198
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10A (Ta) | 13.5 mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,493
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 10A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 80V | 10A (Ta) | 13.4 mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | 10V | ±20V | |||
