Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDS3670
RFQ
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RFQ
1,582
In-stock
ON Semiconductor MOSFET N-CH 100V 6.3A 8-SOIC PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.3A (Ta) 32 mOhm @ 6.3A, 10V 4V @ 250µA 80nC @ 10V 2490pF @ 50V 6V, 10V ±20V
IRF7452
RFQ
VIEW
RFQ
1,736
In-stock
Infineon Technologies MOSFET N-CH 100V 4.5A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 4.5A (Ta) 60 mOhm @ 2.7A, 10V 5.5V @ 250µA 50nC @ 10V 930pF @ 25V 10V ±30V
IRF7490PBF
RFQ
VIEW
RFQ
3,877
In-stock
Infineon Technologies MOSFET N-CH 100V 5.4A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 5.4A (Ta) 39 mOhm @ 3.2A, 10V 4V @ 250µA 56nC @ 10V 1720pF @ 25V 10V ±20V
IRF7473PBF
RFQ
VIEW
RFQ
3,281
In-stock
Infineon Technologies MOSFET N-CH 100V 6.9A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.9A (Ta) 26 mOhm @ 4.1A, 10V 5.5V @ 250µA 61nC @ 10V 3180pF @ 25V 10V ±20V
IRF7452PBF
RFQ
VIEW
RFQ
3,201
In-stock
Infineon Technologies MOSFET N-CH 100V 4.5A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 4.5A (Ta) 60 mOhm @ 2.7A, 10V 5.5V @ 250µA 50nC @ 10V 930pF @ 25V 10V ±30V
IRF7853PBF
RFQ
VIEW
RFQ
1,856
In-stock
Infineon Technologies MOSFET N-CH 100V 8.3A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 8.3A (Ta) 18 mOhm @ 8.3A, 10V 4.9V @ 100µA 39nC @ 10V 1640pF @ 25V 10V ±20V
IRF7495PBF
RFQ
VIEW
RFQ
837
In-stock
Infineon Technologies MOSFET N-CH 100V 7.3A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 7.3A (Ta) 22 mOhm @ 4.4A, 10V 4V @ 250µA 51nC @ 10V 1530pF @ 25V 10V ±20V