- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,438
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 5.2A TO220F | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 25W (Tc) | N-Channel | 200V | 5.2A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 959pF @ 25V | 10V | ±20V | ||||
VIEW |
1,503
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 25W (Tc) | N-Channel | 800V | 5.5A (Tc) | 1.2 Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | ||||
VIEW |
3,125
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 6A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 25W (Tc) | N-Channel | 800V | 6A (Tc) | 950 mOhm @ 2A, 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | 10V | ±30V |