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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	BSS87L6327HTSA1	RFQ VIEW	PDF RFQ	3,849 In-stock	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89	1W (Ta)	N-Channel	-	240V	260mA (Ta)	6 Ohm @ 260mA, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	4.5V, 10V	±20V
	BSP89L6327HTSA1	RFQ VIEW	PDF RFQ	2,160 In-stock	Infineon Technologies	MOSFET N-CH 240V 350MA SOT-223		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	-	240V	350mA (Ta)	6 Ohm @ 350mA, 10V	1.8V @ 108µA	6.4nC @ 10V	140pF @ 25V	4.5V, 10V	±20V
	BSS87E6327	RFQ VIEW	PDF RFQ	3,636 In-stock	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89-4-2	1W (Ta)	N-Channel	-	240V	260mA (Ta)	6 Ohm @ 260mA, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	4.5V, 10V	±20V
	BSS87E6327T	RFQ VIEW	PDF RFQ	1,486 In-stock	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89-4-2	1W (Ta)	N-Channel	-	240V	260mA (Ta)	6 Ohm @ 260mA, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	4.5V, 10V	±20V

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