- Manufacture :
- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,869
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 22.4A 8SOIC | SkyFET®, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3W (Ta), 5.9W (Tc) | N-Channel | - | 30V | 22.4A (Tc) | 6.5 mOhm @ 15A, 10V | 2.7V @ 1mA | 100nC @ 10V | 4190pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,475
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 120W (Tc) | N-Channel | - | 20V | 100A (Tc) | 6.5 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
1,026
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 120W (Tc) | N-Channel | - | 20V | 100A (Tc) | 6.5 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
