Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel - 100V 14.4A (Tc) 200 mOhm @ 14.4A, 12V 4V @ 1mA 40nC @ 12V - 12V ±20V
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ON Semiconductor MOSFET N-CH 300V 14.4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 147W (Tc) N-Channel - 300V 14.4A (Tc) 290 mOhm @ 7.2A, 10V 5V @ 250µA 40nC @ 10V 1360pF @ 25V 10V ±30V