Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 100A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220 167W (Tc) N-Channel - 60V 100A (Tc) 6.7 mOhm @ 30A, 10V 4V @ 250µA 92nC @ 10V 4382pF @ 30V 10V ±20V
IRFB9N65APBF
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Vishay Siliconix MOSFET N-CH 650V 8.5A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 167W (Tc) N-Channel - 650V 8.5A (Tc) 930 mOhm @ 5.1A, 10V 4V @ 250µA 48nC @ 10V 1417pF @ 25V 10V ±30V
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ON Semiconductor MOSFET N-CH 800V 6.6A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 167W (Tc) N-Channel - 800V 6.6A (Tc) 1.9 Ohm @ 3.3A, 10V 5V @ 250µA 35nC @ 10V 1680pF @ 25V 10V ±30V