Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF630B_FP001
RFQ
VIEW
RFQ
1,784
In-stock
ON Semiconductor MOSFET N-CH 200V 9A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 72W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 720pF @ 25V 10V ±30V
FQP10N20CTSTU
RFQ
VIEW
RFQ
2,525
In-stock
ON Semiconductor MOSFET N-CH 200V 9.5A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 72W (Tc) N-Channel - 200V 9.5A (Tc) 360 mOhm @ 4.75A, 10V 4V @ 250µA 26nC @ 10V 510pF @ 25V 10V ±30V
IPP60R180P7XKSA1
RFQ
VIEW
RFQ
2,207
In-stock
Infineon Technologies MOSFET N-CH 650V 18A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 72W (Tc) N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V
FQP10N20C
RFQ
VIEW
RFQ
817
In-stock
ON Semiconductor MOSFET N-CH 200V 9.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 72W (Tc) N-Channel - 200V 9.5A (Tc) 360 mOhm @ 4.75A, 10V 4V @ 250µA 26nC @ 10V 510pF @ 25V 10V ±30V
IPP65R190C7FKSA1
RFQ
VIEW
RFQ
1,713
In-stock
Infineon Technologies MOSFET N-CH 650V 13A TO220 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 72W (Tc) N-Channel - 650V 13A (Tc) 190 mOhm @ 5.7A, 10V 4V @ 290µA 23nC @ 10V 1150pF @ 400V 10V ±20V