- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,873
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 178W (Tc) | N-Channel | 600V | 38A (Tc) | 55 mOhm @ 18A, 10V | 4.5V @ 900µA | 79nC @ 10V | 3194pF @ 400V | 10V | ±20V | ||||
VIEW |
3,721
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 125W (Tc) | N-Channel | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | ||||
VIEW |
2,299
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 125W (Tc) | N-Channel | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | ||||
VIEW |
3,164
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 92W (Tc) | N-Channel | 600V | 18A (Tc) | 125 mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | 1503pF @ 400V | 10V | ±20V | ||||
VIEW |
2,240
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 227W (Tc) | N-Channel | 600V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4.5V @ 1.25mA | 109nC @ 10V | 4354pF @ 400V | 10V | ±20V | ||||
VIEW |
1,538
In-stock
|
Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 92W (Tc) | N-Channel | 600V | 18A (Tc) | 125 mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | 1503pF @ 400V | 10V | ±20V | ||||
VIEW |
2,761
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 32W (Tc) | N-Channel | 600V | 11A (Tc) | 125 mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | 1503pF @ 400V | 10V | ±20V |