Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTMSD2P102LR2G
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RFQ
2,080
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ON Semiconductor MOSFET P-CH 20V 2.3A 8-SOIC FETKY™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 90 mOhm @ 2.4A, 4.5V 1.5V @ 250µA 18nC @ 4.5V 750pF @ 16V 2.5V, 4.5V ±10V
NTMSD2P102LR2
RFQ
VIEW
RFQ
1,017
In-stock
ON Semiconductor MOSFET P-CH 20V 2.3A 8-SOIC FETKY™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 90 mOhm @ 2.4A, 4.5V 1.5V @ 250µA 18nC @ 4.5V 750pF @ 16V 2.5V, 4.5V ±10V