- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,599
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 60A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 40V | 41.6A (Ta), 100A (Tc) | 2 mOhm @ 20A, 10V | 2V @ 250µA | 90nC @ 10V | 4240pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
3,054
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 60A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 40V | 41.6A (Ta), 100A (Tc) | 2 mOhm @ 20A, 10V | 2V @ 250µA | 90nC @ 10V | 4240pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,335
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 60A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 40V | 41.6A (Ta), 100A (Tc) | 2 mOhm @ 20A, 10V | 2V @ 250µA | 90nC @ 10V | 4240pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,615
In-stock
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Vishay Siliconix | MOSFET N-CH 25V 60A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5.4W (Ta), 83W (Tc) | N-Channel | - | 25V | 60A (Tc) | 2 mOhm @ 20A, 10V | 2.6V @ 250µA | 145nC @ 10V | 6590pF @ 15V | 4.5V, 10V | ±20V |