- Manufacture :
- Series :
- Part Status :
- Technology :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,552
In-stock
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IXYS | MOSFET N-CH 800 | PolarHV™ | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 100W (Tc) | N-Channel | - | 800V | 3.6A (Tc) | 3.4 Ohm @ 1.8A, 10V | 5.5V @ 100µA | 14.2nC @ 10V | 750pF @ 25V | 10V | ±30V | |||
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VIEW |
3,305
In-stock
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IXYS | MOSFET N-CH 600 | PolarHV™ | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 70W (Tc) | N-Channel | - | 600V | 3A (Tc) | 2.9 Ohm @ 1.5A, 10V | 5.5V @ 50µA | 9.8nC @ 10V | 411pF @ 25V | 10V | ±30V | |||
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VIEW |
3,291
In-stock
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IXYS | MOSFET N-CH 500 | PolarHV™ | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 70W (Tc) | N-Channel | - | 500V | 3A (Tc) | 2 Ohm @ 1.5A, 10V | 5.5V @ 50µA | 9.3nC @ 10V | 409pF @ 25V | 10V | ±30V | |||
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VIEW |
1,423
In-stock
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IXYS | MOSFET N-CH 600 | PolarHV™ | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 56W (Tc) | N-Channel | - | 600V | 2A (Tc) | 5.1 Ohm @ 1A, 10V | 5V @ 250µA | 7nC @ 10V | 240pF @ 25V | 10V | ±30V | |||
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VIEW |
981
In-stock
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Cree/Wolfspeed | MOSFET N-CHANNEL 1200V 28A DIE | Z-FET™ | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 202W (Tj) | N-Channel | - | 1200V | 28A (Tj) | 220 mOhm @ 10A, 20V | 4V @ 1mA | 47.1nC @ 20V | 928pF @ 800V | 20V | +25V, -5V | |||
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VIEW |
2,348
In-stock
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Cree/Wolfspeed | MOSFET N-CHANNEL 1200V 50A DIE | Z-FET™ | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 313mW (Tj) | N-Channel | - | 1200V | 50A (Tj) | 110 mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | 20V | +25V, -5V | |||
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VIEW |
2,521
In-stock
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IXYS | MOSFET N-CH 600V | PolarHV™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 50W (Tc) | N-Channel | - | 600V | 1.4A (Tc) | 9 Ohm @ 700mA, 10V | 5.5V @ 25µA | 5.2nC @ 10V | 140pF @ 25V | 10V | ±30V | |||
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VIEW |
3,882
In-stock
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MICROSS/On Semiconductor | MOSFET N-CH 50V 220MA DIE | - | Active | Tray | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 360mW (Ta) | N-Channel | - | 50V | 220mA (Ta) | 3.5 Ohm @ 220mA, 10V | 1.5V @ 1mA | 2.4nC @ 10V | 27pF @ 25V | 10V | ±20V | |||
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VIEW |
2,331
In-stock
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MICROSS/On Semiconductor | DIE ASSYMERTRICAL FOR FDC6329L | PowerTrench® | Active | Tray | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | Die | 500mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 70 mOhm @ 2A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 779pF @ 10V | 2.5V, 4.5V | ±8V | |||
