Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7458PBF
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1,280
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 14A (Ta) 8 mOhm @ 14A, 16V 4V @ 250µA 59nC @ 10V 2410pF @ 15V 10V, 16V ±30V
IRF7492PBF
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RFQ
2,478
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRF7492
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RFQ
1,674
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRF7406PBF
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RFQ
2,111
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Infineon Technologies MOSFET P-CH 30V 5.8A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V