Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7207PBF
RFQ
VIEW
RFQ
1,880
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Infineon Technologies MOSFET P-CH 20V 5.4A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 20V 5.4A (Tc) 60 mOhm @ 5.4A, 4.5V 700mV @ 250µA 22nC @ 4.5V 780pF @ 15V 2.7V, 4.5V ±12V
IRF7207
RFQ
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RFQ
3,165
In-stock
Infineon Technologies MOSFET P-CH 20V 5.4A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 20V 5.4A (Tc) 60 mOhm @ 5.4A, 4.5V 700mV @ 250µA 22nC @ 4.5V 780pF @ 15V 2.7V, 4.5V ±12V
IRF7204
RFQ
VIEW
RFQ
1,874
In-stock
Infineon Technologies MOSFET P-CH 20V 5.3A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 20V 5.3A (Ta) 60 mOhm @ 5.3A, 10V 2.5V @ 250µA 25nC @ 10V 860pF @ 10V 4.5V, 10V ±12V
IRF7201
RFQ
VIEW
RFQ
3,278
In-stock
Infineon Technologies MOSFET N-CH 30V 7.3A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 30V 7.3A (Tc) 30 mOhm @ 7.3A, 10V 1V @ 250µA 28nC @ 10V 550pF @ 25V 4.5V, 10V ±20V
IRF7201PBF
RFQ
VIEW
RFQ
1,450
In-stock
Infineon Technologies MOSFET N-CH 30V 7.3A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 30V 7.3A (Tc) 30 mOhm @ 7.3A, 10V 1V @ 250µA 28nC @ 10V 550pF @ 25V 4.5V, 10V ±20V
IRF7493PBF
RFQ
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RFQ
1,884
In-stock
Infineon Technologies MOSFET N-CH 80V 9.3A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 10V ±20V
IRF7205PBF
RFQ
VIEW
RFQ
2,828
In-stock
Infineon Technologies MOSFET P-CH 30V 4.6A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 30V 4.6A (Ta) 70 mOhm @ 4.6A, 10V 3V @ 250µA 40nC @ 10V 870pF @ 10V 4.5V, 10V ±20V
IRF7204PBF
RFQ
VIEW
RFQ
3,146
In-stock
Infineon Technologies MOSFET P-CH 20V 5.3A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 20V 5.3A (Ta) 60 mOhm @ 5.3A, 10V 2.5V @ 250µA 25nC @ 10V 860pF @ 10V 4.5V, 10V ±12V