Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTA18P10T
RFQ
VIEW
RFQ
1,420
In-stock
IXYS MOSFET P-CH 100V 18A TO-263 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 83W (Tc) P-Channel - 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 10V ±15V
IXTA3N100P
RFQ
VIEW
RFQ
1,773
In-stock
IXYS MOSFET N-CH 1000V 3A TO-263 PolarVHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 125W (Tc) N-Channel - 1000V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±20V