- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,766
In-stock
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STMicroelectronics | MOSFET N-CH 620V I2PAK-FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 25W (Tc) | N-Channel | - | 620V | 4.5A (Tc) | 2 Ohm @ 1.9A, 10V | 4.5V @ 50µA | 23nC @ 10V | 560pF @ 50V | 10V | ±30V | ||||
VIEW |
1,195
In-stock
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STMicroelectronics | MOSFET N CH 620V 8.4A I2PAKFP | SuperMESH3™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 30W (Tc) | N-Channel | - | 620V | 8.4A (Tc) | 750 mOhm @ 4A, 10V | 4.5V @ 100µA | 42nC @ 10V | 1250pF @ 50V | 10V | ±30V |