Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB60R199CPATMA1
RFQ
VIEW
RFQ
2,659
In-stock
Infineon Technologies MOSFET N-CH 650V 16A TO-263 CoolMOS™ Not For New Designs Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 139W (Tc) N-Channel - 650V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 10V ±20V
IPB60R199CPATMA1
RFQ
VIEW
RFQ
3,391
In-stock
Infineon Technologies MOSFET N-CH 650V 16A TO-263 CoolMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 139W (Tc) N-Channel - 650V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 10V ±20V
IPB60R199CPATMA1
RFQ
VIEW
RFQ
2,485
In-stock
Infineon Technologies MOSFET N-CH 650V 16A TO-263 CoolMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 139W (Tc) N-Channel - 650V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 10V ±20V
SPB16N50C3ATMA1
RFQ
VIEW
RFQ
1,087
In-stock
Infineon Technologies MOSFET N-CH 560V 16A TO-263 CoolMOS™ Last Time Buy Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 160W (Tc) N-Channel - 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 10V ±20V
SPB16N50C3ATMA1
RFQ
VIEW
RFQ
1,742
In-stock
Infineon Technologies MOSFET N-CH 560V 16A TO-263 CoolMOS™ Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 160W (Tc) N-Channel - 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 10V ±20V
SPB16N50C3ATMA1
RFQ
VIEW
RFQ
3,738
In-stock
Infineon Technologies MOSFET N-CH 560V 16A TO-263 CoolMOS™ Last Time Buy Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 160W (Tc) N-Channel - 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 10V ±20V