Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMT29EN,115
RFQ
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RFQ
3,494
In-stock
NXP USA Inc. MOSFET N-CH 30V 6A SC-73 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 820mW (Ta), 8.33W (Tc) N-Channel - 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 4.5V, 10V ±20V
IRFL014TRPBF
RFQ
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RFQ
3,534
In-stock
Vishay Siliconix MOSFET N-CH 60V 2.7A SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) N-Channel - 60V 2.7A (Tc) 200 mOhm @ 1.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IRFL014NTRPBF
RFQ
VIEW
RFQ
1,515
In-stock
Infineon Technologies MOSFET N-CH 55V 1.9A SOT223 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 1.9A (Ta) 160 mOhm @ 1.9A, 10V 4V @ 250µA 11nC @ 10V 190pF @ 25V 10V ±20V
STN3N40K3
RFQ
VIEW
RFQ
3,022
In-stock
STMicroelectronics MOSFET N-CH 400V 1.8A SOT223 SuperMESH3™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3.3W (Ta) N-Channel - 400V 1.8A (Tc) 3.4 Ohm @ 600mA, 10V 4.5V @ 50µA 11nC @ 10V 165pF @ 50V 10V ±30V