Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M007A090FH
RFQ
VIEW
RFQ
2,006
In-stock
Global Power Technologies Group MOSFET N-CH 900V 7A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40.3W (Tc) N-Channel - 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
3,628
In-stock
ON Semiconductor MOSFET N-CH 200V 39A TO220F - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 37W (Tc) N-Channel - 200V 39A (Tc) 66 mOhm @ 19.5A, 10V 5V @ 250µA 49nC @ 10V 2130pF @ 25V 10V ±30V
FDPF39N20
RFQ
VIEW
RFQ
1,368
In-stock
ON Semiconductor MOSFET N-CH 200V 39A TO-220F UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 37W (Tc) N-Channel - 200V 39A (Tc) 66 mOhm @ 19.5A, 10V 5V @ 250µA 49nC @ 10V 2130pF @ 25V 10V ±30V