Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF9610
RFQ
VIEW
RFQ
681
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V
IRF710
RFQ
VIEW
RFQ
2,047
In-stock
Vishay Siliconix MOSFET N-CH 400V 2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 36W (Tc) N-Channel 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 10V ±20V
STP2NK60Z
RFQ
VIEW
RFQ
1,380
In-stock
STMicroelectronics MOSFET N-CH 600V 1.4A TO-220 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel 600V 1.4A (Tc) 8 Ohm @ 700mA, 10V 4.5V @ 50µA 10nC @ 10V 170pF @ 25V 10V ±30V
IRF710PBF
RFQ
VIEW
RFQ
653
In-stock
Vishay Siliconix MOSFET N-CH 400V 2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 36W (Tc) N-Channel 400V 2A (Tc) 3.6 Ohm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 170pF @ 25V 10V ±20V
IRF9610PBF
RFQ
VIEW
RFQ
1,885
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V