- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,563
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 7.6A TO220F | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | - | 200V | 7.6A (Tc) | 230 mOhm @ 7A, 10V | 4V @ 1mA | 38nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
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VIEW |
1,540
In-stock
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ON Semiconductor | MOSFET P-CH 100V 22A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 125W (Tc) | P-Channel | - | 100V | 22A (Tc) | 125 mOhm @ 11A, 10V | 4V @ 250µA | 50nC @ 10V | 1500pF @ 25V | 10V | ±30V | |||
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VIEW |
3,884
In-stock
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ON Semiconductor | MOSFET N-CH 800V 5.8A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 158W (Tc) | N-Channel | - | 800V | 5.8A (Tc) | 1.95 Ohm @ 2.9A, 10V | 5V @ 250µA | 31nC @ 10V | 1500pF @ 25V | 10V | ±30V | |||
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VIEW |
3,374
In-stock
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ON Semiconductor | MOSFET N-CH 100V 33A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 127W (Tc) | N-Channel | - | 100V | 33A (Tc) | 52 mOhm @ 16.5A, 10V | 4V @ 250µA | 51nC @ 10V | 1500pF @ 25V | 10V | ±25V |