Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SFP9630
RFQ
VIEW
RFQ
2,437
In-stock
ON Semiconductor MOSFET P-CH 200V 6.5A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 70W (Tc) P-Channel - 200V 6.5A (Tc) 800 mOhm @ 3.3A, 10V 4V @ 250µA 36nC @ 10V 965pF @ 25V 10V ±30V
STP7NM80
RFQ
VIEW
RFQ
2,366
In-stock
STMicroelectronics MOSFET N-CH 800V 6.5A TO-220 MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 90W (Tc) N-Channel - 800V 6.5A (Tc) 1.05 Ohm @ 3.25A, 10V 5V @ 250µA 18nC @ 10V 620pF @ 25V 10V ±30V
FQP7N20L
RFQ
VIEW
RFQ
2,405
In-stock
ON Semiconductor MOSFET N-CH 200V 6.5A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 63W (Tc) N-Channel - 200V 6.5A (Tc) 750 mOhm @ 3.25A, 10V 2V @ 250µA 9nC @ 5V 500pF @ 25V 5V, 10V ±20V
FDP7N60NZ
RFQ
VIEW
RFQ
1,907
In-stock
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 147W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V