Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDP5500
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2,271
In-stock
ON Semiconductor MOSFET N-CH 55V 80A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 375W (Tc) N-Channel - 55V 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 250µA 269nC @ 20V 3565pF @ 25V 10V ±20V
CSD18536KCS
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RFQ
2,468
In-stock
Texas Instruments MOSFET N-CH 60V 200A TO-220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 375W (Tc) N-Channel - 60V 200A (Ta) 1.6 mOhm @ 100A, 10V 2.2V @ 250µA 108nC @ 10V 11430pF @ 30V 4.5V, 10V ±20V
FDP5500-F085
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RFQ
2,342
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ON Semiconductor MOSFET N-CH 55V 80A TO-220AB Automotive, AEC-Q101, UltraFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 375W (Tc) N-Channel - 55V 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 250µA 269nC @ 20V 3565pF @ 25V 10V ±20V
CSD19506KCS
RFQ
VIEW
RFQ
833
In-stock
Texas Instruments MOSFET N-CH 80V TO-220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 375W (Tc) N-Channel - 80V 100A (Ta) 2.3 mOhm @ 100A, 10V 3.2V @ 250µA 156nC @ 10V 12200pF @ 40V 6V, 10V ±20V
CSD19536KCS
RFQ
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RFQ
1,262
In-stock
Texas Instruments MOSFET N-CH 100V TO-220 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 375W (Tc) N-Channel - 100V 150A (Ta) 2.7 mOhm @ 100A, 10V 3.2V @ 250µA 153nC @ 10V 12000pF @ 50V 6V, 10V ±20V