Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFT4N100Q
RFQ
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RFQ
3,772
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IXYS MOSFET N-CH 1000V 4A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 150W (Tc) N-Channel 1000V 4A (Tc) 3 Ohm @ 2A, 10V 5V @ 1.5mA 39nC @ 10V 1050pF @ 25V 10V ±20V
IXTT4N150HV
RFQ
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RFQ
3,397
In-stock
IXYS MOSFET N-CH 1.5KV 4A TO268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 280W (Tc) N-Channel 1500V 4A (Tc) 6 Ohm @ 500mA, 10V 5V @ 250µA 44.5nC @ 10V 1576pF @ 25V 10V ±30V
SCT2H12NYTB
RFQ
VIEW
RFQ
3,360
In-stock
Rohm Semiconductor 1700V 1.2 OHM 4A SIC FET - Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 44W (Tc) N-Channel 1700V 4A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 410µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
SCT2H12NYTB
RFQ
VIEW
RFQ
3,455
In-stock
Rohm Semiconductor 1700V 1.2 OHM 4A SIC FET - Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 44W (Tc) N-Channel 1700V 4A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 410µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
SCT2H12NYTB
RFQ
VIEW
RFQ
1,787
In-stock
Rohm Semiconductor 1700V 1.2 OHM 4A SIC FET - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 44W (Tc) N-Channel 1700V 4A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 410µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V