- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
922
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.3A SOT-23-3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 30V | 5.3A (Ta) | 27 mOhm @ 5.2A, 10V | 2.3V @ 25µA | 2.6nC @ 4.5V | 382pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,401
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 2.7A SOT-23-3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 30V | 2.7A (Ta) | 100 mOhm @ 2.7A, 10V | 2.3V @ 25µA | 1nC @ 4.5V | 110pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
601
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 1.2A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 30V | 1.2A (Ta) | 250 mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | 4.5V, 10V | ±20V |