Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP125H6433XTMA1
RFQ
VIEW
RFQ
3,318
In-stock
Infineon Technologies MOSFET N-CH 600V 120MA SOT223 SIPMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 600V 120mA (Ta) - 2.3V @ 94µA 6.6nC @ 10V 150pF @ 25V 4.5V, 10V ±20V
BSP299H6327XUSA1
RFQ
VIEW
RFQ
1,532
In-stock
Infineon Technologies MOSFET N-CH 500V 0.4A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V
BSP129H6906XTSA1
RFQ
VIEW
RFQ
3,074
In-stock
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 SIPMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1V @ 108µA 5.7nC @ 5V 108pF @ 25V 0V, 10V ±20V
BSP296NH6327XTSA1
RFQ
VIEW
RFQ
3,286
In-stock
Infineon Technologies MOSFET N-CH 100V 1.2A SOT-223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.2A (Ta) 600 mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7nC @ 10V 152.7pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
RFQ
VIEW
RFQ
3,893
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP318SH6327XTSA1
RFQ
VIEW
RFQ
865
In-stock
Infineon Technologies MOSFET N-CH 60V 2.6A SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 2.6A (Tj) 90 mOhm @ 2.6A, 10V 2V @ 20µA 20nC @ 10V 380pF @ 25V 4.5V, 10V ±20V
BSP322PH6327XTSA1
RFQ
VIEW
RFQ
2,738
In-stock
Infineon Technologies MOSFET P-CH 100V 1A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 100V 1A (Tc) 800 mOhm @ 1A, 10V 1V @ 380µA 16.5nC @ 10V 372pF @ 25V 4.5V, 10V ±20V
BSP373NH6327XTSA1
RFQ
VIEW
RFQ
3,335
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
2,962
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP716NH6327XTSA1
RFQ
VIEW
RFQ
2,267
In-stock
Infineon Technologies MOSFET N-CH 75V 2.3A SOT223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 75V 2.3A (Ta) 160 mOhm @ 2.3A, 10V 1.8V @ 218µA 13.1nC @ 10V 315pF @ 25V 4.5V, 10V ±20V
BSP316PH6327XTSA1
RFQ
VIEW
RFQ
1,133
In-stock
Infineon Technologies MOSFET P-CH 100V 0.68A SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 100V 680mA (Ta) 1.8 Ohm @ 680mA, 10V 2V @ 170µA 6.4nC @ 10V 146pF @ 25V 4.5V, 10V ±20V
BSP372NH6327XTSA1
RFQ
VIEW
RFQ
3,649
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.8A (Ta) 230 mOhm @ 1.8A, 10V 1.8V @ 218µA 14.3nC @ 10V 329pF @ 25V 4.5V, 10V ±20V
BSP88H6327XTSA1
RFQ
VIEW
RFQ
895
In-stock
Infineon Technologies MOSFET N-CH 4SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1.4V @ 108µA 6.8nC @ 10V 95pF @ 25V 2.8V, 10V ±20V
BSP324H6327XTSA1
RFQ
VIEW
RFQ
3,168
In-stock
Infineon Technologies MOSFET N-CH 400V 170MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 400V 170mA (Ta) 25 Ohm @ 170mA, 10V 2.3V @ 94µA 5.9nC @ 10V 154pF @ 25V 4.5V, 10V ±20V
BSP129H6327XTSA1
RFQ
VIEW
RFQ
3,998
In-stock
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1V @ 108µA 5.7nC @ 5V 108pF @ 25V 0V, 10V ±20V
BSP92PH6327XTSA1
RFQ
VIEW
RFQ
2,969
In-stock
Infineon Technologies MOSFET P-CH 250V 260MA 4SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 250V 260mA (Ta) 12 Ohm @ 260mA, 10V 2V @ 130µA 5.4nC @ 10V 104pF @ 25V 2.8V, 10V ±20V
BSP89H6327XTSA1
RFQ
VIEW
RFQ
3,967
In-stock
Infineon Technologies MOSFET N-CH 4SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 240V 350mA (Ta) 6 Ohm @ 350mA, 10V 1.8V @ 108µA 6.4nC @ 10V 140pF @ 25V 4.5V, 10V ±20V
BSP320SH6327XTSA1
RFQ
VIEW
RFQ
699
In-stock
Infineon Technologies MOSFET N-CH 60V 2.9A SOT223 SIPMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 2.9A (Tj) 120 mOhm @ 2.9A, 10V 4V @ 20µA 12nC @ 10V 340pF @ 25V 10V ±20V
BSP149H6327XTSA1
RFQ
VIEW
RFQ
771
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP315PH6327XTSA1
RFQ
VIEW
RFQ
3,455
In-stock
Infineon Technologies MOSFET P-CH 60V 1.17A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 1.17A (Ta) 800 mOhm @ 1.17A, 10V 2V @ 160µA 7.8nC @ 10V 160pF @ 25V 4.5V, 10V ±20V
BSP300H6327XUSA1
RFQ
VIEW
RFQ
1,342
In-stock
Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
BSP149H6906XTSA1
RFQ
VIEW
RFQ
2,697
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP298H6327XUSA1
RFQ
VIEW
RFQ
3,036
In-stock
Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) - TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V
BSP170PH6327XTSA1
RFQ
VIEW
RFQ
2,107
In-stock
Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 4V @ 250µA 14nC @ 10V 410pF @ 25V 10V ±20V
BSP295H6327XTSA1
RFQ
VIEW
RFQ
2,617
In-stock
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 4.5V, 10V ±20V
BSP317PH6327XTSA1
RFQ
VIEW
RFQ
1,227
In-stock
Infineon Technologies MOSFET P-CH 250V 0.43A SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 250V 430mA (Ta) 4 Ohm @ 430mA, 10V 2V @ 370µA 15.1nC @ 10V 262pF @ 25V 4.5V, 10V ±20V
BSP171PH6327XTSA1
RFQ
VIEW
RFQ
3,258
In-stock
Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 2V @ 460µA 20nC @ 10V 460pF @ 25V 4.5V, 10V ±20V
BSP125H6327XTSA1
RFQ
VIEW
RFQ
2,217
In-stock
Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 2.3V @ 94µA 6.6nC @ 10V 150pF @ 25V 4.5V, 10V ±20V