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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,739
In-stock
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Infineon Technologies | MOSFET N-CH 600V 0.09A SOT-89 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | - | 600V | 90mA (Ta) | 45 Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8nC @ 10V | 131pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,628
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | P-Channel | - | 250V | 190mA (Ta) | 12 Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
2,524
In-stock
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Infineon Technologies | MOSFET N-CH 60V 3.2A SOT89 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | - | 60V | 3.2A (Ta) | 60 mOhm @ 3.2A, 10V | 2.3V @ 15µA | 5.6nC @ 5V | 657pF @ 25V | 4.5V, 10V | ±20V | |||
