- Manufacture :
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- Part Status :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | ||||
VIEW |
901
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 5A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 83W (Tc) | N-Channel | - | 500V | 4.7A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 18.5nC @ 10V | 530pF @ 25V | 10V | ±30V |