Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NDD04N50Z-1G
RFQ
VIEW
RFQ
1,731
In-stock
ON Semiconductor MOSFET N-CH 500V 3A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 61W (Tc) N-Channel - 500V 3A (Tc) 2.7 Ohm @ 1.5A, 10V 4.5V @ 50µA 12nC @ 10V 308pF @ 25V 10V ±30V
STD4NK50ZD-1
RFQ
VIEW
RFQ
1,448
In-stock
STMicroelectronics MOSFET N-CH 500V 3A IPAK SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 500V 3A (Tc) 2.7 Ohm @ 1.5A, 10V 4.5V @ 50µA 12nC @ 10V 310pF @ 25V 10V ±30V
TK6Q60W,S1VQ
RFQ
VIEW
RFQ
1,343
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel Super Junction 600V 6.2A (Ta) 820 mOhm @ 3.1A, 10V 3.7V @ 310µA 12nC @ 10V 390pF @ 300V 10V ±30V
FQU2N60CTU
RFQ
VIEW
RFQ
1,508
In-stock
ON Semiconductor MOSFET N-CH 600V 1.9A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 44W (Tc) N-Channel - 600V 1.9A (Tc) 4.7 Ohm @ 950mA, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
NDD03N60Z-1G
RFQ
VIEW
RFQ
1,894
In-stock
ON Semiconductor MOSFET N-CH 600V IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 61W (Tc) N-Channel - 600V 2.6A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 12nC @ 10V 312pF @ 25V 10V ±30V
STULED524
RFQ
VIEW
RFQ
1,447
In-stock
STMicroelectronics MOSFET N-CH 525V 4A IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 525V 4A (Tc) 2.6 Ohm @ 2.2A, 10V 4.5V @ 50µA 12nC @ 10V 340pF @ 100V 10V ±30V
STU2LN60K3
RFQ
VIEW
RFQ
2,834
In-stock
STMicroelectronics MOSFET N CH 600V 2A IPAK SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 600V 2A (Tc) 4.5 Ohm @ 1A, 10V 4.5V @ 50µA 12nC @ 10V 235pF @ 50V 10V ±30V
STD4NK50Z-1
RFQ
VIEW
RFQ
2,155
In-stock
STMicroelectronics MOSFET N-CH 500V 3A IPAK SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 500V 3A (Tc) 2.7 Ohm @ 1.5A, 10V 4.5V @ 50µA 12nC @ 10V 310pF @ 25V 10V ±30V
GP2M004A060PG
RFQ
VIEW
RFQ
3,366
In-stock
Global Power Technologies Group MOSFET N-CH 600V 4A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 86.2W (Tc) N-Channel - 600V 4A (Tc) 2.5 Ohm @ 2A, 10V 5V @ 250µA 12nC @ 10V 545pF @ 25V 10V ±30V