Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP2M005A060PGH
RFQ
VIEW
RFQ
842
In-stock
Global Power Technologies Group MOSFET N-CH 600V 4.2A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 98.4W (Tc) N-Channel - 600V 4.2A (Tc) 2.1 Ohm @ 2.1A, 10V 5V @ 250µA 14nC @ 10V 658pF @ 25V 10V ±30V
FQU3N60CTU
RFQ
VIEW
RFQ
2,858
In-stock
ON Semiconductor MOSFET N-CH 600V 2.4A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 50W (Tc) N-Channel - 600V 2.4A (Tc) 3.4 Ohm @ 1.2A, 10V 4V @ 250µA 14nC @ 10V 565pF @ 25V 10V ±30V
FQU4P25TU
RFQ
VIEW
RFQ
3,419
In-stock
ON Semiconductor MOSFET P-CH 250V 3.1A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 45W (Tc) P-Channel - 250V 3.1A (Tc) 2.1 Ohm @ 1.55A, 10V 5V @ 250µA 14nC @ 10V 420pF @ 25V 10V ±30V
FCU2250N80Z
RFQ
VIEW
RFQ
3,016
In-stock
ON Semiconductor MOSFET N-CH 800V 2.6A IPAK SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 39W (Tc) N-Channel - 800V 2.6A (Tc) 2.25 Ohm @ 1.3A, 10V 4.5V @ 260µA 14nC @ 10V 585pF @ 100V 10V ±20V